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Local order and magnetic field effects on the electronic properties of disordered binary alloys in the Quantum Site Percolation limit

机译:局部有序和磁场对电子特性的影响   Quantum site percolation限制中的无序二元合金

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摘要

Electronic properties of disordered binary alloys are studied via thecalculation of the average Density of States (DOS) in two and three dimensions.We propose a new approximate scheme that allows for the inclusion of localorder effects in finite geometries and extrapolates the behavior of infinitesystems following `finite-size scaling' ideas. We particularly investigate thelimit of the Quantum Site Percolation regime described by a tight-bindingHamiltonian. This limit was chosen to probe the role of short range order (SRO)properties under extreme conditions. The method is numerically highly efficientand asymptotically exact in important limits, predicting the correct DOSstructure as a function of the SRO parameters. Magnetic field effects can alsobe included in our model to study the interplay of local order and the shiftedquantum interference driven by the field. The average DOS is highly sensitiveto changes in the SRO properties, and striking effects are observed when amagnetic field is applied near the segregated regime. The new effects observedare twofold: there is a reduction of the band width and the formation of a gapin the middle of the band, both as a consequence of destructive interference ofelectronic paths and the loss of coherence for particular values of themagnetic field. The above phenomena are periodic in the magnetic flux. Forother limits that imply strong localization, the magnetic field produces minorchanges in the structure of the average DOS.
机译:通过计算二维和三维平均态密度(DOS),研究了无序二元合金的电子性能。我们提出了一种新的近似方案,该方案允许将局部有序效应包含在有限几何中,并根据``有限尺寸缩放”的想法。我们特别研究了由紧密结合的哈密顿量描述的量子位点渗流机制的局限性。选择此限制是为了探究极端条件下短程订单(SRO)属性的作用。该方法在数值上是高效的,并且在重要的范围内渐近精确,可以根据SRO参数预测正确的DOS结构。磁场效应也可以包含在我们的模型中,以研究局部秩序与磁场驱动的位移量子干扰之间的相互作用。平均DOS对SRO特性的变化高度敏感,并且在隔离区域附近施加磁场时会观察到惊人的影响。观察到的新影响是双重的:由于电子路径的破坏性干扰以及特定磁场值的相干性损失,带宽减小并且在带中间形成了间隙。上述现象在磁通量中是周期性的。对于暗示强定位的其他限制,磁场会在平均DOS的结构中产生较小的变化。

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  • 年度 1998
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  • 正文语种 {"code":"en","name":"English","id":9}
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